SYNTHESIS AND INVESTIGATION OF STRUCTURAL, SURFACE MORPHOLOGICAL AND OPTICAL PROPERTIES OF InSe/PMItz HYBRID HETEROJUNCTION

On a series of annealed and unannealed InSe thin films which were formerly produced by electrochemical deposition method, organic PMItz semiconductor compound was growth physical vapour (PVD) method. Structural analyses the carried out X-ray diffractometry (XRD) method revealed that glass/ITO/InSe film formed in hexagonal phase while glass/ITO/InSe(annealed) monoclinic In6Se7 orthorombic In4Se3 phases. Surface layers forming heterojunction conducted atomic force microscoby (AFM) it is observed are homogenous have different roughness values. Optical demonstrated annealing result with increased absorption coefficient reduced energy band gap. Moreover, other optical parameters i.e. refractive indice(n), extinction (k), real dielectric constant(Er), imaginary constant(Ei) conductivity determined compared within 300-1000 nm range.